inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor BUK454-200 description high speed switching easy driver for cost effective application applications use in switched mode power supplies (smps), motor control,welding, and in general purpose switching resistance application absolute maximum ratings(t a =25 ) symbol arameter value unit v dss drain-source voltage (v gs =0) 200 v v gs gate-source voltage 30 v i d drain current-continuous@ tc=37 9.2 a p tot total dissipation@tc=25 90 w t j max. operating junction temperature 150 t stg storage temperature range 150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.47 /w r th j-a thermal resistance,junction to ambient 60 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor BUK454-200 electrical characteristics (t c =25 ) symbol parameter conditions min max unit v (br)dss drain-source breakdown voltage v gs = 0; i d = 0.25ma 200 v v gs(th) gate threshold voltage v ds = v gs ; i d = 1ma 2.1 4 v r ds(on) drain-source on-stage resistance v gs = 10v; i d = 3.5a 0.4 i gss gate source leakage current v gs = 30v;v ds = 0 100 na i dss zero gate voltage drain current v ds = 200v;v gs = 0 20 ua v sd diode forward voltage i f = 9.2a;v gs = 0 1.5 v pdf pdffactory pro www.fineprint.cn
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